Category: |
MOSFETs |
RoHS: |
Compliant |
Packaging: |
Reel |
FET Type: |
N-Channel, P-Channel |
Number of Channels: |
2 |
Drain to Source Breakdown Voltage (Vds): |
40 V |
Continuous Drain Current (ID): |
9 A |
Drain to Source Resistance: |
24 mΩ |
Gate to Source Voltage (Vgs): |
20 V |
Gate to Source Threshold Voltage: |
1 V, 3 V |
Power Dissipation: |
3.1 W |
Input Capacitance: |
1 nF |
Gate Charge: |
20 nC, 24 nC |
Max Operating Temperature: |
150 °C |
Min Operating Temperature: |
-55 °C |
Rise Time: |
3 ns |
Max Junction Temperature (Tj): |
150 °C |
Max Power Dissipation: |
3.1 W |
Number of Elements: |
2 |
Rds On Max: |
24 mΩ |
Resistance: |
24 MΩ |
Threshold Voltage: |
1.7 V |
Case/Package: |
TO-252-4 |
Mount: |
SMD/SMT |