Category: |
MOSFETs |
RoHS: |
Compliant |
Packaging: |
Reel |
FET Type: |
P-Channel |
Number of Channels: |
1 |
Drain to Source Breakdown Voltage (Vds): |
-30 V |
Continuous Drain Current (ID): |
1.5 A |
Drain to Source Resistance: |
125 mΩ |
Gate to Source Voltage (Vgs): |
20 V |
Gate to Source Threshold Voltage: |
3 V |
Power Dissipation: |
500 mW |
Input Capacitance: |
182 pF |
Gate Charge: |
5.6 nC |
Max Operating Temperature: |
150 °C |
Min Operating Temperature: |
-55 °C |
Current Rating: |
-1.5 A |
Dual Supply Voltage: |
-30 V |
Element Configuration: |
Single |
Rise Time: |
13 ns |
Fall Time: |
13 ns |
Max Junction Temperature (Tj): |
150 °C |
Max Power Dissipation: |
460 mW |
Number of Elements: |
1 |
Rds On Max: |
125 mΩ |
Resistance: |
125 MΩ |
Voltage Rating (DC): |
-30 V |
Threshold Voltage: |
-1.9 V |
Case/Package: |
SuperSOT-3 |
Mount: |
SMD/SMT |