Category: |
MOSFETs |
RoHS: |
Compliant |
Packaging: |
Reel |
Number of Channels: |
1 |
Drain to Source Breakdown Voltage (Vds): |
-30 V |
Continuous Drain Current (ID): |
-8.8 A |
Drain to Source Resistance: |
16 mΩ |
Gate to Source Voltage (Vgs): |
25 V |
Gate to Source Threshold Voltage: |
3 V |
Min Operating Temperature: |
-55 °C |
Max Operating Temperature: |
150 °C |
Power Dissipation: |
2.5 W |
Input capacitance: |
1.845 nF |
Gate Charge: |
40 nC |
Current Rating: |
-8.8 A |
Element Configuration: |
Single |
Rise Time: |
13 ns |
Max Junction Temperature (Tj): |
150 °C |
Max Power Dissipation: |
2.5 W |
Number of Elements: |
1 |
Rds On Max: |
20 mΩ |
Resistance: |
20 MΩ |
Voltage Rating (DC): |
-30 V |
Threshold Voltage: |
-2.1 V |
Case/Package: |
SOIC-8 |
Mount: |
SMD/SMT |