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NTGD1100LT1G
- Part #： 500264309
- Mfr.Part #： NTGD1100LT1G
- Manufacturer： On Semiconductor
- Datasheet：
- Description： MOSFETs TSOP-6 SMD/SMT N-Channel, P-Channel number of channels:2 830 mW 8 V Continuous Drain Current (ID):3.3 A
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| Product Attribute | Value |
|---|---|
| Category: | MOSFETs |
| RoHS: | Compliant |
| Packaging: | Reel |
| FET Type: | N-Channel, P-Channel |
| Number of Channels: | 2 |
| Drain to Source Breakdown Voltage (Vds): | 8 V |
| Continuous Drain Current (ID): | 3.3 A |
| Drain to Source Resistance: | 40 mΩ |
| Gate to Source Voltage (Vgs): | 8 V |
| Gate to Source Threshold Voltage: | 600 mV |
| Power Dissipation: | 830 mW |
| Input Capacitance: | - |
| Gate Charge: | - |
| Max Operating Temperature: | 150 °C |
| Min Operating Temperature: | -55 °C |
| Current Rating: | 3.3 A |
| Element Configuration: | Dual |
| Max Junction Temperature (Tj): | 150 °C |
| Max Power Dissipation: | 830 mW |
| Number of Elements: | 2 |
| Resistance: | 40 mΩ |
| Voltage Rating (DC): | 20 V |
| Case/Package: | TSOP-6 |
| Mount: | SMD/SMT |
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