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Home / Components / Info / MJD112G

MJD112G

  • Part #: 500019838
  • Mfr.Part #: MJD112G
  • Manufacturer: On Semiconductor
  • Datasheet:

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  • Description: BJTs DPAK SMD/SMT NPN 20 W Collector Base Voltage (VCBO):100 V Collector Emitter Voltage (VCEO):100 V Emitter Base Voltage (VEBO):5 V
Images are for reference only.
Product Attribute Value
Category: BJTs
RoHS: Compliant
Transistor Type: NPN
Collector Emitter Voltage (VCEO): 100 V
Collector Base Voltage (VCBO): 100 V
Emitter Base Voltage (VEBO): 5 V
Collector Emitter Saturation Voltage: -
Max Collector Current: 2 A
Gain Bandwidth Product: -
Min Operating Temperature: -65 °C
Power Dissipation: 20 W
Max Operating Temperature: 150 °C
Max Cutoff Collector Current: 20 µA
Packaging: Tube
Continuous Collector Current: 2 A
Current Rating: 2 A
Element Configuration: Single
Number of Elements: 1
Transition Frequency: 25 MHz
Voltage Rating (DC): 100 V
Case/Package: DPAK
Mount: SMD/SMT
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  • Lead Time : 7-10 Days
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